Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-01-26
2010-11-09
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S751000, C257S772000, C257SE33063, C257SE23028
Reexamination Certificate
active
07829910
ABSTRACT:
Each second electrode formed on a second main surface of a compound semiconductor layer of a light emitting device has an alloyed contact layer disposed contacting the second main surface, aimed at reducing contact resistance with the compound semiconductor layer, and a solder layer connecting the alloyed contact layer to the conductive support. The solder layer forms therein a Sn-base solder layer disposed on the alloyed contact layer side having a melting point lower than the alloyed contact layer, and a Au—Sn-base solder layer disposed contacting the Sn-base solder layer opposed to the alloyed contact layer side, containing total Au and Sn of 80% or more, and having a melting point higher than the Sn-base solder layer. This configuration can provide excellent reliability of bonding between the Au—Sn-base solder layer and the alloyed contact layer, and consequently less causative of delamination of the Au—Sn-base solder layer.
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Ikeda Hitoshi
Obara Masayoshi
Ligai Maria
Oliff & Berridg,e PLC
Pham Thanh V
Shin-Etsu Handotai & Co., Ltd.
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