Light emitting device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257SE33005

Reexamination Certificate

active

08008684

ABSTRACT:
A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.

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patent: 10-2010-0003469 (2010-01-01), None

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