Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-08-30
2011-08-30
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33005
Reexamination Certificate
active
08008684
ABSTRACT:
A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.
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Cho Hyun Kyong
Hwang Sung Min
Park Gyeong Geun
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Prenty Mark
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