Light emitting device and method for manufacturing the same

Details Light emitting device and method for manufacturing the same Light emitting device and method for manufacturing the same

2011-08-02

2011-08-02

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257S103000, C257SE33062

Reexamination Certificate

active

07989834

ABSTRACT:
A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.

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