Light emitting device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257SE33034, C438S046000

Reexamination Certificate

active

07928454

ABSTRACT:
Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.

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patent: 6875627 (2005-04-01), Bour et al.
patent: 7501299 (2009-03-01), Wong et al.
patent: 7663138 (2010-02-01), Fujikura
patent: 2007/0152207 (2007-07-01), Yen et al.
patent: 2007/0152232 (2007-07-01), Kobayakawa et al.
patent: 2008/0048172 (2008-02-01), Muraki et al.
patent: 2008/0142781 (2008-06-01), Lee
patent: 2009/0242874 (2009-10-01), Biwa et al.

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