Light emitting device and method for manufacturing the same

Details Light emitting device and method for manufacturing the same Light emitting device and method for manufacturing the same

2011-04-19

2011-04-19

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257SE33034, C438S046000

Reexamination Certificate

active

07928454

ABSTRACT:
Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.

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