Light-emitting device and method for manufacturing the same

Details Light-emitting device and method for manufacturing the same Light-emitting device and method for manufacturing the same

2011-06-28

2011-06-28

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S098000, C257S103000, C257SE33008

Reexamination Certificate

active

07968867

ABSTRACT:
A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

REFERENCES:
patent: 7206488 (2007-04-01), Altug et al.
patent: 2006/0284187 (2006-12-01), Wierer et al.
patent: 2007/0172183 (2007-07-01), Wang
patent: 1877872 (2006-12-01), None
patent: 2008-53134 (2008-03-01), None

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