Light-emitting device and method for manufacturing the same

Details Light-emitting device and method for manufacturing the same Light-emitting device and method for manufacturing the same

2008-03-26

2011-10-25

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257S014000, C257S079000, C257SE29071, C438S378000, C438S795000, C438S962000, C977S720000, C977S721000, C977S774000

Reexamination Certificate

active

08044382

ABSTRACT:
A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

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International Search Report for PCT/JP2008/000744, mailed May 27, 2008.

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