Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-02-20
2007-02-20
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S024000, C438S025000, C438S026000, C438S027000
Reexamination Certificate
active
10976987
ABSTRACT:
A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes:(1) the mean diameter of projections on the roughened surface is smaller than the light wavelength;(2) a pitch of the roughened surface is irregular; and(3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index.The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
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Asakawa Koji
Fujimoto Akira
Ohashi Kenichi
Sugiyama Hitoshi
Suzuki Kenji
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