Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-01-25
2005-01-25
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C257S097000, C257S190000, C438S047000
Reexamination Certificate
active
06847046
ABSTRACT:
A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.
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Chen Shi-Ming
Li Wen-Liang
Shie Yung-Hsin
Wei Shih-Chen
Chen Shi-Ming
Crane Sara
Epitech Corporation, Ltd.
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