Light emitting device and method for making same

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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C257S086000, C257S098000, C257S103000, C257S442000

Reexamination Certificate

active

07112829

ABSTRACT:
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second barrier layer. The stop layer is of the same nature as the emitting layer. One may form a mirror on the stack, eliminate the substrate by etching, and form another mirror on the stop layer to obtain a micro-cavity. The device may be applied in particular to the detection of gas.

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C. Roux et al.: “II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrors” Journal of Crystal Growth, vol. 201-202, pp. 1036-1039 May 1999.
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Kenichi Iga et al.: “Surface emitting semiconductor lasers” IEEE Journal of Quantum Electronics, vol. 24, No. 9, pp. 1845-1855, Sep. 1998.

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