Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-09-26
2006-09-26
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S086000, C257S098000, C257S103000, C257S442000
Reexamination Certificate
active
07112829
ABSTRACT:
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second barrier layer. The stop layer is of the same nature as the emitting layer. One may form a mirror on the stack, eliminate the substrate by etching, and form another mirror on the stop layer to obtain a micro-cavity. The device may be applied in particular to the detection of gas.
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Hadji Emmanuel
Picard Emmanuel
Zanatta Jean-Paul
Commissariat a l''Energie Atomique
Nadav Ori
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