Light emitting device and method for fabricating the same

Details Light emitting device and method for fabricating the same Light emitting device and method for fabricating the same

2011-07-19

2011-07-19

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S076000, C257S081000, C257S091000, C257S099000, C257S183000, C257S401000, C257S773000

Reexamination Certificate

active

07982234

ABSTRACT:
There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.

REFERENCES:
patent: 2009/0283782 (2009-11-01), Shakuda

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