Light-emitting device and method for fabricating the same

Details Light-emitting device and method for fabricating the same Light-emitting device and method for fabricating the same

2011-08-30

2011-08-30

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000

Reexamination Certificate

active

08008671

ABSTRACT:
A transparent conductive semiconductor substrate70comprising a light emitting layer section24is directly bonded on one of main surfaces on a main compound semiconductor layer50composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer50and the transparent conductive semiconductor substrate70is adjusted to be equal to or greater than 1×1014atoms/cm2and equal to or less than 2×1015atoms/cm2. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.

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patent: 2006/0202219 (2006-09-01), Ohashi et al.
patent: 2007/0145883 (2007-06-01), Ohashi et al.
patent: 2001-057441 (2001-02-01), None
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patent: 2006-253298 (2006-09-01), None

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