Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S079000, C257S080000, C257S082000, C257S088000, C257S089000, C257S098000, C438S099000
Reexamination Certificate
active
06900457
ABSTRACT:
A light emitting device and a manufacturing method thereof and a display used the light emitting device, in which fine patterning for the light emitting device is realized by a simple process and the light leakage is prevented and the efficiency at extracting light is increased, are provided. The light emitting device provides an organic electroluminescent (EL) device in which electrodes and a luminescent layer are formed, a diffraction grating or a zone plate, and a filter. Light emitted from the luminescent layer transmits through the diffraction grating or the zone plate, which is formed with a designated grating pitch, or is reflected at the diffraction grating or the zone plate. With this, the transmitting or reflecting light is controlled to be in a designated angle region. And when the light is transmitted through the filter, light having different color tone and chromaticity from those of the light emitted from the luminescent layer is extracted.
REFERENCES:
patent: 6194119 (2001-02-01), Wolk et al.
patent: 6204523 (2001-03-01), Carey et al.
patent: 6512250 (2003-01-01), Koyama et al.
patent: 62-172691 (1987-07-01), None
patent: 1-220394 (1989-09-01), None
patent: 3-152897 (1991-06-01), None
patent: 5-258859 (1993-10-01), None
patent: 5-258860 (1993-10-01), None
patent: 5-275172 (1993-10-01), None
patent: 7-220871 (1995-08-01), None
patent: 10-162958 (1998-06-01), None
patent: 63-314795 (1998-12-01), None
patent: 11-8070 (1999-01-01), None
patent: 11-121164 (1999-04-01), None
patent: 2991183 (1999-10-01), None
patent: 11-283751 (1999-10-01), None
patent: 11-329742 (1999-11-01), None
patent: 2000-284726 (2000-10-01), None
Ishikawa Hitoshi
Oda Atsushi
Toguchi Satoru
Louie Wai-Sing
Pham Long
Samsung SDI & Co., Ltd.
LandOfFree
Light emitting device and manufacturing method thereof and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device and manufacturing method thereof and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device and manufacturing method thereof and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3453634