Light emitting device and manufacturing method thereof

Details Light emitting device and manufacturing method thereof Light emitting device and manufacturing method thereof

2011-04-19

2011-04-19

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE33001, C257SE33026, C257SE21158

Reexamination Certificate

active

07928449

ABSTRACT:
Provided is a light emitting device. The light emitting device comprises a second electrode layer, a second conduction type semiconductor layer, an active layer, a first conduction type semiconductor layer, a first electrode layer, and an insulating layer. The second conduction type semiconductor layer is formed on the second electrode layer. The active layer is formed on the second conduction type semiconductor layer. The first conduction type semiconductor layer is formed on the active layer. The first electrode layer is formed on the first conduction type semiconductor layer. The insulating layer is disposed between the second electrode layer and the second conduction type semiconductor layer.

REFERENCES:
patent: 5877047 (1999-03-01), Weitzel et al.
patent: 6340824 (2002-01-01), Komoto et al.
patent: 2004/0089869 (2004-05-01), Uemura
patent: 2004/0104395 (2004-06-01), Hagimoto et al.
patent: 2006/0071230 (2006-04-01), Lee et al.
patent: 2007/0295952 (2007-12-01), Jang et al.

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