Light-emitting device and manufacturing method thereof

Details Light-emitting device and manufacturing method thereof Light-emitting device and manufacturing method thereof

2006-09-06

2010-12-07

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S081000, C438S047000

Reexamination Certificate

active

07848374

ABSTRACT:
Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved.

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W. T. Silfvast, Laser Fundamentals. New York: Cambridge University Press, 2004.

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