Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-08-02
2011-08-02
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S013000, C257S014000, C257S079000, C257S081000, C257S086000, C257S094000, C257S099000, C257S103000, C257SE33001, C257SE33028, C257SE33029
Reexamination Certificate
active
07989832
ABSTRACT:
Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
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Andújar Leonardo
Birch & Stewart Kolasch & Birch, LLP
Harriston William
LG Innotek Co., Ltd
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