Light emitting device and manufacturing method thereof

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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Details

C438S149000, C438S154000, C438S155000, C438S424000, C438S482000, C438S488000

Reexamination Certificate

active

06905907

ABSTRACT:
An element structure is provided in which film formation irregularities and deterioration of an organic compound layer formed on an electrode are prevented in an active matrix light emitting device. After forming an insulating film so as to cover edge portions of a conductor which becomes a light emitting element electrode, polishing is performed using a CMP (chemical mechanical polishing) method in the present invention, thus forming a structure in which surfaces of a first electrode and a leveled insulating layer are coplanar. The film formation irregularities in the organic compound layer formed on the electrode can thus be prevented, and electric field concentration from the edge portions of the electrode can be prevented.

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