Light emitting device and manufacturing method thereof

Details Light emitting device and manufacturing method thereof Light emitting device and manufacturing method thereof

2011-03-01

2011-03-01

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S040000, C257S059000, C257S072000, C257S088000, C257S098000, C257SE31095, C257SE31096

Reexamination Certificate

active

07897979

ABSTRACT:
A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator19, exposing a portion of the first electrode18cto form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode18bin a region to form a light emission region, in which emitted light from the layer containing the organic compound20is reflected on the inclined surface of the first electrode18cto increase the total take-out amount of light in the direction of an arrow shown in FIG.1A and, further, forming a light absorbing multi-layered film24comprising light absorbing multi-layered film on the first electrode18cother than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).

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