Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-09-28
2011-10-25
Estrada, Michelle (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S021000, C257S082000, C257S431000, C257SE33001, C257SE51018, C257SE31105
Reexamination Certificate
active
08044439
ABSTRACT:
A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.
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International Search Report (ISR) for PCT/JP2006/319360 for Examiner consideration, citing foreign references Nos. 1-3 listed above.
PCT/ISA/237 in PCT/JP2006/319360 and its translation of Section V.
Translation of PCT/ISA/237, IB338, and IB373 of PCT/JP2006/319360.
Machine translation of JP2003-198061, which has been submitted in a previous IDS on Apr. 2, 2008.
Iwata Masatoshi
Kobayashi Yoshiyuki
Sakamoto Ryo
Tsujikawa Susumu
Chen Yoshimura LLP
Dowa Electronics Materials Co., Ltd.
Estrada Michelle
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