Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-18
2007-09-18
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27132
Reexamination Certificate
active
10848144
ABSTRACT:
The invention provides a downsized structure of a light emitting device, and a light emitting device which has enough reliability as a downsized light emitting device. The light emitting device comprising light emitting elements according to the invention includes a signal processing circuit disposed beside an FPC and the like that tended to be the dead space conventionally. Also, the light emitting device has a sealed structure using a barrier film in which moisture and oxygen can be blocked from outside not to come into TFTs, wirings, and the light emitting elements formed over a substrate.
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Koyama Jun
Miyake Hiroyuki
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan
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