Light emitting device and manufacturing method

Details Light emitting device and manufacturing method Light emitting device and manufacturing method

2011-07-19

2011-07-19

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S012000, C257S013000, C257S014000, C257S015000, C257S016000, C257S017000, C257S018000, C257SE33025

Reexamination Certificate

active

07981710

ABSTRACT:
A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.

REFERENCES:
patent: 6639354 (2003-10-01), Kojima et al.
patent: 2006/0091789 (2006-05-01), Aoyama et al.
patent: 2007/0069202 (2007-03-01), Choi et al.
patent: 2007/0159073 (2007-07-01), Sakanoue et al.
patent: 2001-210865 (2001-08-01), None
patent: 2006-127884 (2006-05-01), None
patent: 2007-95685 (2007-04-01), None
patent: 2007-194194 (2007-08-01), None

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