Light emitting device and manufacture method thereof

Details Light emitting device and manufacture method thereof Light emitting device and manufacture method thereof

2007-03-20

2007-03-20

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C257S079000, C257SE33056, C257SE25032

Reexamination Certificate

active

11249680

ABSTRACT:
A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.

REFERENCES:
patent: 6900068 (2005-05-01), Lin et al.
patent: 2004/0188696 (2004-09-01), Hsing Chen et al.
patent: 2004/0203189 (2004-10-01), Chen et al.

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