Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-08-30
2008-11-18
Louiw, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S080000, C257S082000, C257S093000, C257S103000, C257S777000, C257SE51018, C257SE51022, C257SE33001, C257SE33054
Reexamination Certificate
active
07453092
ABSTRACT:
A light emitting device having: a predetermined optical form that is provided on a surface of an LED element mounted on a base, the predetermined optical form being made to allow an increase in efficiency of taken out light from an inside of the LED element; and a sealing material that seals the predetermined optical form. The sealing material has a refractive index of 1.6 or more, the predetermined optical form is formed in a surface of a substrate of the LED element, and the substrate has a refractive index nearly equal to that of a light emitting layer of the LED element.
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Chinese Office Aciton dated Mar. 7, 2008 with English translation.
Suehiro Yoshinobu
Tasumi Koji
Armand Marc
Louiw Wai-Sing
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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