Light emitting device and light emitting device module

Details Light emitting device and light emitting device module Light emitting device and light emitting device module

2006-09-05

2006-09-05

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S103000

Reexamination Certificate

active

07102174

ABSTRACT:
The present invention discloses a light emitting device comprising a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.

REFERENCES:
patent: 5566198 (1996-10-01), Horie et al.
patent: 5619518 (1997-04-01), Horie et al.
patent: 5675601 (1997-10-01), Karakida et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5838028 (1998-11-01), Horie et al.
patent: 5870417 (1999-02-01), Verdiell et al.
patent: 5920767 (1999-07-01), Horie et al.
patent: 6005263 (1999-12-01), Saito et al.
patent: 6130147 (2000-10-01), Major et al.
patent: 6172998 (2001-01-01), Horie et al.
patent: 6323052 (2001-11-01), Horie et al.
patent: 6677618 (2004-01-01), Horie et al.
patent: 6744074 (2004-06-01), Horie et al.
patent: 6791181 (2004-09-01), Horie et al.
patent: 0227865 (1987-07-01), None
patent: 0 744 799 (1996-11-01), None
patent: 1-292874 (1989-11-01), None
patent: 2-170486 (1990-07-01), None
patent: 8-37340 (1996-02-01), None
patent: 08-037340 (1996-02-01), None
patent: 08-228048 (1996-09-01), None
patent: 9-214048 (1997-08-01), None
patent: 10-209570 (1998-08-01), None
patent: 10-242565 (1998-09-01), None
patent: 10-303459 (1998-11-01), None
Copy of European Search Report dated Sep. 5, 2005, 5 pages.
Hideyoshi Horie et al.: “Reliability Improvement of 980-nm Laser Diodes with a New Facet Passivation Process,”IEEE Journal of Selected Topics in Quantum Electronics, vol. 5, No. 3, May/Jun. 1999, pp. 832-838.
P.G. Eliseev et al.: “Analysis of the Mode Internal Coupling in InGaAs/GaAs Laser Diodes,”Laser Physics, vol. 4, No 3, 1994, pp. 485-492.
U.S. Appl. No. 11/082,906.
U.S. Appl. No. 11/072,273.
Chinone et al., “Mode-Hopping Noise in Index-Guided Semiconductor Lasers and Its Reduction by Saturable Absorbers”, IEEE Journal of Quantum Electronics, vol. QE-21, No. 8, pp.1264-1270, Aug. 1985.
Avrutsky, et al., “Investigations of the Spectral Characteristics of 980-nm InGaAs-GaAs-A1GaAs Lasers”, IEEE Journal of Quantum Electronics, vol. 33, No. 10, pp.1801-1809, Oct. 1997.
M. Sugo, et al. Osa Tops on Optical Amplifiers and Their Applications, 1996, vol. 5, pp. 101-104.
Ivan A. Avrutsky et al., IEEE Journal of Quantum Electronics, 1997, vol. 33, No. 10, pp. 1801-1809.
Appl. Phys, Let. 70(11), Mar. 17, 1997.

Affiliated with

Also associated with

Rating

Light emitting device and light emitting device module does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting device and light emitting device module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device and light emitting device module will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3562176