Light-emitting device and its manufacturing method

Details Light-emitting device and its manufacturing method Light-emitting device and its manufacturing method

2011-04-12

2011-04-12

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S478000, C438S669000, C438S629000, C438S700000, C438S672000, C257S774000, C257S079000, C257SE21577, C257S225000, C257S103000

Reexamination Certificate

active

07923270

ABSTRACT:
In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device comprises semiconductor layers of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes to apply currents into each of the semiconductor layers, an insulating layer which holds the semiconductor layers, and mount-surface-electrodes. The semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited. The insulating layer has VIA which electrically connect the mount-surface-electrodes and the semiconductor-surface-electrodes. In the manufacturing process, firstly, semiconductor layers and semiconductor-surface-electrodes are deposited on the transparent crystal substrate, and by using build-up process, insulating layer and the mount-surface-electrodes are formed, and secondly, VIA are formed, and finally, the transparent crystal substrate is separated to get light-emitting device. Light can be extracted directly and efficiently from the semiconductor layers. With the mount-surface-electrodes, light-emitting device can be mounted by using surface mount technology.

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Patent Abstract of Japan, vol. 2000, No. 10, Nov. 17, 2000.

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