Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-12-12
2011-11-08
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S086000, C257SE33001
Reexamination Certificate
active
08053789
ABSTRACT:
There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.
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Kim Chang Yeon
Yoon Yeo Jin
H.C. Park & Associates PLC
Nguyen Khiem D
Seoul Opto Device Co., Ltd.
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