Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-06-28
2011-06-28
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S081000, C257S088000, C257S089000, C257S098000, C257SE33001
Reexamination Certificate
active
07968866
ABSTRACT:
A light emitting diode comprising a lead, an LED chip mounted on said lead, said LED chip having a substrate and semiconductor layers formed on said substrate, a transparent material covering said LED chip, and a phosphor contained in said transparent material and absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein the main emission peak of said LED chip is within the range from 400 nm to 530 nm, and said LED chip is mounted on said lead with substrate-side up and is electrically connected with said lead by a metallic bump.
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Moriguchi Toshio
Noguchi Yasunobu
Sakano Kensho
Shimizu Yoshinori
Birch & Stewart Kolasch & Birch, LLP
Nichia Corporation
Pham Hoai v
Ullah Elias
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