Light emitting device

Details Light emitting device Light emitting device

1997-11-19

1999-07-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 43, 257 59, 257 72, 257 94, 257 96, 257410, 257613, 257 76, H01L 3300, H05B 3314

Patent

active

059200863

ABSTRACT:
A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with first and second electrodes, which emits radiant energy upon activation. This material is a rare earth metal oxide or a rare earth metal halide.

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English translation of Batz '344, supra, Feb. 1971.
Rozhkov et al., Electical Breakdown of Rare Earth Oxide Insulator Thin Films in Silicon MIS Structures, 1995 IEEE 5th Conference on Conduction and Breakdown in Solid Electronics; pp. 418-422, Jul. 13, 1995.
H.Ennen et al. (1985) "1.54-.mu.m Electroluminescence of Erbium-doped Silicon Grown by Molecular Beam Epitaxy", Applied Physics Letters 46:381-383.
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G. Franzo et al. (1994) "Room-temperature Electroluminescence from Er-doped Crystalline Si", Applied Physics Letters 64:2235-2237.
T. Kimura et al. (1994) "Electrochemical Er doping of Porous Silicon and its Room-temperature Luminescence at .about.1.54 .mu.m", Applied Physics Letters 65:983-985.
J. Michel et al. (1991) "Impurity Enhancement of the 1.54-.mu.m Err3+ Luminescence in Silicon", J. Applied Physics 70:2672-2678.
R. Serna et al. (1994) "1.5 .mu.m Room-temperature Luminescence from Er-implanted Oxygen-doped Silicon Epitaxial Films Grown by Molecular Beam Epitaxy", J. Applied Physics 75:2644-2647.
B. Zheng et al. (1994) "Room-temperature Sharp Line Electroluminescence at .lambda.=1.54 .mu.m from an Erbium-doped, Silicon Light-emitting Diode", Applied Physics Letters 64:2842-2842.

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