Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-18
2011-01-18
Fahmy, Wael M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000, C257S055000, C257S056000, C257S062000, C257S072000, C257SE29083, C257SE29092, C257SE29101
Reexamination Certificate
active
07872259
ABSTRACT:
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
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Den Tohru
Hosono Hideo
Iwasaki Tatsuya
Kamiya Toshio
Nomura Kenji
Canon Kabushiki Kaisha
Fahmy Wael M
Fitzpatrick ,Cella, Harper & Scinto
Tokyo Institute of Technology
Yang Minchul
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