Light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S052000, C257S055000, C257S056000, C257S062000, C257S072000, C257SE29083, C257SE29092, C257SE29101

Reexamination Certificate

active

07872259

ABSTRACT:
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

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