Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-06-14
2011-06-14
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000
Reexamination Certificate
active
07960747
ABSTRACT:
A light emitting device is configured to prevent leakage of light but can be reduced in thickness as compared with conventional devices, and can effectively prevent degradation in luminous flux (luminous flux drop). The light emitting device can include a light emitting element, an optically transparent sealing resin having a pair of faces opposed to each other with an axis of light emitting direction of the light emitting device interposed therebetween. The sealing resin can cover the light emitting element and be mixed with a wavelength converting material. A reflective film can be provided on at least one of the pair of opposed faces of the sealing resin. The reflective film can be a white coating containing a white pigment in a concentration of 23 wt % to 54 wt % and formed to be 14 μm to 50 μm in thickness.
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“Dispersion of Reflection Coeffifient and Phase Shift of Antireflecting Multilayer” by Lupashko et al. Journal of Applied Spectroscopy vol. 11, No. 4, pp. 1272-1273, Oct. 1969.
Aoki Dai
Saida Takahiro
Sakamoto Hironobu
Kenealy Vaidya LLP
Louie Wai-Sing
Stanley Electric Co. Ltd.
Tang Sue
LandOfFree
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