Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2011-01-11
2011-01-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257SE33012
Reexamination Certificate
active
07868351
ABSTRACT:
A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.
REFERENCES:
patent: 2002-067000 (2002-03-01), None
patent: 3409126 (2003-03-01), None
patent: 20006-120328 (2006-05-01), None
Terabe, K., et al., “Quantized conductance atomic switch”, Nature, Jan. 6, 2005, pp. 47-50, vol. 433, Nature Publishing Group.
Fischer, A. “Electroluminescent Lines in ZnS Powder Particles”, Journal of the Electrochemical Society, Nov. 1962, pp. 1043-1049, vol. 109 No. 11.
Nasu Shogo
Odagiri Masaru
Ono Masayuki
Satoh Eiichi
Taniguchi Reiko
McDermott Will & Emery LLP
Panasonic Corporation
Pert Evan
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