Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Patent
1992-08-03
1994-03-01
Epps, Georgia Y.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
257 13, 257 87, 257 93, 257 94, 372 44, H01L 3300
Patent
active
052910377
ABSTRACT:
A light-emitting device in which the increase in the intensity of the emitted light is linear with respect to the increase in current, thereby facilitating current-based control of the light intensity. In the device, this is achieved by providing a high-resistance region, or a furrow, between the electrode on the semiconductor surface and the portion of the device p-n junction that is exposed on the surface.
REFERENCES:
patent: 3998672 (1976-12-01), Miyoshi et al.
Tanaka Yukio
Tohmon Ryoichi
Eastman Kodak Company
Epps Georgia Y.
Owens Raymond L.
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