Light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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Details

C438S029000, C438S022000, C438S042000, C257SE33072, C257SE33065, C257SE33067, C257SE33068, C257SE33069

Reexamination Certificate

active

08049233

ABSTRACT:
A light-emitting device of the present invention includes: a semiconductor layer1including a light-emitting layer12; a recess/projection portion14including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer12, the recess/projection portion14being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.

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