Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-03-09
2011-11-01
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C438S029000, C438S022000, C438S042000, C257SE33072, C257SE33065, C257SE33067, C257SE33068, C257SE33069
Reexamination Certificate
active
08049233
ABSTRACT:
A light-emitting device of the present invention includes: a semiconductor layer1including a light-emitting layer12; a recess/projection portion14including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer12, the recess/projection portion14being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.
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Fukshima Hiroshi
Yamae Kazuyuki
Yasuda Masaharu
Greenblum & Bernstein P.L.C.
Ligai Maria
Panasonic Electric Works Co., Ltd.
Pham Thanh V
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