Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-07-02
2011-11-01
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000, C257SE33001
Reexamination Certificate
active
08049226
ABSTRACT:
A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.
REFERENCES:
patent: 6813298 (2004-11-01), Chan et al.
patent: 2001/0038101 (2001-11-01), Nemoto
patent: 2006/0105492 (2006-05-01), Veres et al.
patent: 2006/0128118 (2006-06-01), Nagahama et al.
patent: 2007/0090377 (2007-04-01), Lin et al.
Chen Tzer-Perng
Lin Jin-Ywan
Lu Chih-Chiang
Wang Pai-Hsiang
Bacon & Thomas PLLC
Epistar Corporation
Trinh Michael
Tynes, Jr. Lawrence
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