Light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S098000, C257SE33001

Reexamination Certificate

active

08049226

ABSTRACT:
A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.

REFERENCES:
patent: 6813298 (2004-11-01), Chan et al.
patent: 2001/0038101 (2001-11-01), Nemoto
patent: 2006/0105492 (2006-05-01), Veres et al.
patent: 2006/0128118 (2006-06-01), Nagahama et al.
patent: 2007/0090377 (2007-04-01), Lin et al.

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