Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-05-27
2011-12-20
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S101000, C257SE21116, C372S045010
Reexamination Certificate
active
08080818
ABSTRACT:
A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
REFERENCES:
patent: 5392306 (1995-02-01), Usami et al.
patent: 5740192 (1998-04-01), Hatano et al.
patent: 06-021583 (1994-01-01), None
patent: 11-008406 (1999-01-01), None
patent: 2000-332364 (2000-11-01), None
patent: 2003-289156 (2003-10-01), None
patent: 2006-013463 (2006-01-01), None
patent: 2006-324685 (2006-11-01), None
http://hyperphysics.phy-astr.gsu.edu/hbase/debrog.html#c5.
Shigekawa et al. “High-field electron velocity measurment in GaAs/AIGaAs multiple-quantum wells”, Appl. Phys. Lett. 61 (13), Sep. 26, 1992, p. 1555-1557.
Japanese Office Action for Japanese Patent Application No. 2008-203039 Issued on Jan. 7, 2011.
Japanese Office Action for Japanese Patent Application No. 2008-203039 issued on Aug. 1, 2011.
Kabushiki Kaisha Toshiba
Pert Evan
Turocy & Watson LLP
Wilson Scott R
LandOfFree
Light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4253496