Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-12-23
2010-02-09
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S090000, C257S089000, C257S085000, C257S084000, C257S096000, C257S081000, C257S099000, C257S100000, C315S169300
Reexamination Certificate
active
07659546
ABSTRACT:
A light emitting device firstly includes a light emitting diode (LED) structure, having a top surface with a light emitting region. The device also has a heterojunction within the device structure, the heterojunction having a p-type and an n-type semiconductor layer, and a plurality of electrodes positioned on the top surface, each being electrically connected to one of the p-type and n-type semiconductor layers. At least a first and a second electrodes are connected to a same type semiconductor layer and are physically separated from each other. The device further includes a first and a second heterojunction regions within the heterojunction, each being respectively defined between one of the first and second electrodes and one of the other electrodes connected to the other type semiconductor layer. The first and second heterojunction regions are alternatively driven for emitting lights in the time domain.
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Lu Ming
Shuy Geoffrey Wen Tai
Hong Kong Applied Science and Technology Research Institute Co.
Nguyen Joseph
Parker Kenneth A
Schlee Alexander R.
Schlee IP International P.C.
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