Light emitting device

Details Light emitting device Light emitting device

2009-08-14

2010-02-23

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE33067

Reexamination Certificate

active

07667225

ABSTRACT:
A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The carrier trap portion has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.

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Office Action issued Nov. 20, 2009 in U.S. Appl. No. 12/486,267.

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