Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-30
2009-12-15
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S040000, C257SE29100, C257SE27060
Reexamination Certificate
active
07633082
ABSTRACT:
A light emitting device includes a laminate of a lower electrode layer, an organic light-emitting layer, and an upper transparent electrode layer. In the light emitting device, an auxiliary electrode layer is formed of colloidal nano-sized particles of a conductive metal between the lower electrode layer and the organic light-emitting layer. The auxiliary electrode layer causes the lower electrode layer to be flat and the light emitting efficient to be improved. A light emitting device having a structure in which a transparent electrode layer is formed as the lower electrode layer, and an organic light-emitting layer, an auxiliary electrode layer, and an upper electrode layer are sequentially formed thereon has the same effects. When glass is produced by a sol-gel method using metal alkoxide and the light emitting device is sealed by the glass, it is possible to extend the light emitting period.
REFERENCES:
patent: 6465082 (2002-10-01), Takezawa et al.
patent: 7215075 (2007-05-01), Kurata
patent: 11-273859 (1999-10-01), None
patent: 2001-068264 (2001-03-01), None
Alps Electric Co. ,Ltd.
Brinks Hofer Gilson & Lione
Potter Roy K
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