Light emitting device

Details Light emitting device Light emitting device

2011-04-19

2011-04-19

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257SE33064, C257SE25032

Reexamination Certificate

active

07928463

ABSTRACT:
A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature.

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Sandia Lab, Solid-State Lighting Science, Light Creation Materials, ZnO Material Section, http://ssIs.sandia.gov/overview/technologies.
Davis et al., “Large magnetic filed effects in organic light emitting diodes . . . ”, 2004, J. Vac. Sci. Technol., vol. A 22, No. 4, p. 1885-1891.
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Kim et al. “Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs”, Applied Physics Letters, vol. 81, No. 7, Aug. 12, 2002, p. 1326-1328.
Arnaudov et al. “Electron transport in MOVPE grown InGaN/GaN MQW in moderate magnetic field”, 10th European Workshop on MOVPE, Lecce (Italy) Jun. 8-11, 2003.
“1st Office Action of China Counterpart Application”, issued on Oct. 13, 2010, p. 1-p. 3, in which the listed reference was cited.

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