Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-07-10
2007-07-10
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S079000, C257S084000, C257S089000, C257S092000, C257S093000, C257S099000
Reexamination Certificate
active
11033719
ABSTRACT:
A light emitting element array is made with large light emitting elements and small light emitting elements are arranged on a substrate in a matrix-like form. The large light emitting element has the luminescent area of about 1 mm square. There is a clearance N1of about 0.5 mm between the large light emitting elements. The small light emitting element has the luminescent area of about 0.5 mm square, and each small light emitting element is disposed at a position corresponding to each clearance N1in the scanning direction. Because the large light emitting elements and the small light emitting elements do not overlap each other in the scanning direction, even if the light emitting element array comes close to a thermosensitive recording paper, there becomes no uneven distribution of light quantity of the light emitting element array in the scanning direction.
REFERENCES:
patent: 4975729 (1990-12-01), Gordon
patent: 6137593 (2000-10-01), Venkateswar et al.
patent: 2003-145812 (2003-05-01), None
FUJIFILM Corporation
Louie Wai-Sing
Sughrue & Mion, PLLC
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