Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-07-17
2007-07-17
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S086000, C257S094000, C257S101000, C257S103000
Reexamination Certificate
active
10923830
ABSTRACT:
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitting layer and is smaller than the bandgap of the p-type cladding layer.
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Armstrong Kratz Quintos Hanson & Brooks, LLP
Louie Wai-Sing
Sanyo Electric Company, Ltd
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