Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-16
2007-01-16
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S100000, C257SE23023
Reexamination Certificate
active
10515141
ABSTRACT:
A CAN package light emitting device comprises a semiconductor laser1bonded on a sub mount6and a CAN package2for housing the semiconductor laser1bonded on the sub mount6. The CAN package2comprises a fixing structure3for fixing the semiconductor laser at a predetermined position, and a cap4covering the semiconductor laser1fixed to the fixing structure3. Vapor pressure of Si organic compound gas in the CAN package2is limited to or below 5.4×102N/m2to prevent any deposit as thick as inviting characteristics deterioration from being formed on the light emitting portion of the semiconductor laser1within the guaranteed time of its proper operation.
REFERENCES:
patent: 6396023 (2002-05-01), Aikiyo
patent: 6404786 (2002-06-01), Kondo et al.
patent: 2002/0100914 (2002-08-01), Yoshida
patent: 655813 (1995-05-01), None
patent: 2003-298170 (2003-10-01), None
Mizuno Takashi
Taniguchi Tadashi
Yoshida Hiroshi
Depke Robert J.
Fletcher Sean
Richards N. Drew
Rockey, Depke, Lyons & Kitzinger LLC
Sony Corporation
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