Light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Details

C258S005000, C258S005000

Reexamination Certificate

active

07145177

ABSTRACT:
There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a part of a gate electrode is etched to form the TFT having a GOLD region. Thus, the TFTs having required functions can be easily formed in the driver circuit and the pixel portion, respectively, on the same substrate.

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Specification, claims, abstract of U.S. Appl. No. 09/724,387 filed Nov. 28, 2000 to Inukai et al.

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