Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-12-05
2006-12-05
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C258S005000, C258S005000
Reexamination Certificate
active
07145177
ABSTRACT:
There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a part of a gate electrode is etched to form the TFT having a GOLD region. Thus, the TFTs having required functions can be easily formed in the driver circuit and the pixel portion, respectively, on the same substrate.
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Specification, claims, abstract of U.S. Appl. No. 09/724,387 filed Nov. 28, 2000 to Inukai et al.
Fujimoto Etsuko
Inukai Kazutaka
Murakami Satoshi
Nguyen Tuan H.
Robinson Eric J.
Robinson Intelletual Property Law Office, P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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