Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-02-07
2006-02-07
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000, C257S201000
Reexamination Certificate
active
06995403
ABSTRACT:
A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.
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Huang Pao-I
Tu Chuan-Cheng
Wu Jen-Chau
Young Cheng-Chung
Glenn Michael A.
Glenn Patent Group
Graybill David E.
United Epitaxy Company Ltd.
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