Light emitting device

Details Light emitting device Light emitting device

2005-10-18

2005-10-18

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S080000, C257S082000, C257S083000, C257S084000, C257S085000, C257S086000, C257S087000, C257S101000, C257S102000, C257S103000, C257S222000, C257S225000, C257S288000, C257S910000, C257S911000, C257S918000

Reexamination Certificate

active

06956240

ABSTRACT:
In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.

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