Light emitting device

Details Light emitting device Light emitting device

2005-01-25

2005-01-25

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000

Reexamination Certificate

active

06847056

ABSTRACT:
A light emitting device100has a structure in which a p type InGaAs layer7as an electrode contact layer and an ITO electrode layer8as an oxide transparent electrode layer are formed in the order in a first major surface17side of a light emitting layer section24. In a second major surface18side of the light emitting layer section24, an n type InGaAs layer9as an electrode contact layer and an ITO electrode layer10as an oxide transparent electrode layer are formed in the order. The ITO electrode layers8and10together with the p type InGaAs layer7and the n type InGaAs layer9are formed on the respective both major surfaces17and18of the light emitting layer section24so as to cover the respective both major surfaces17and18in the entirety thereof.

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