1989-09-13
1991-01-22
Epps, Georgia
357 2, 357 4, 357 58, 357 59, H01L 3300
Patent
active
049874608
ABSTRACT:
A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.
REFERENCES:
patent: 4069492 (1978-01-01), Pankove et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4317844 (1982-03-01), Carlson et al.
patent: 4527179 (1985-07-01), Yamazaki
Hirai Yutaka
Sano Masafumi
Takasu Katsuji
Tsuda Hisanori
Canon Kabushiki Kaisha
Epps Georgia
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