Light emitting compositional semiconductor device

Details Light emitting compositional semiconductor device Light emitting compositional semiconductor device

1989-11-30

1991-10-15

James, Andrew J.

357 4, 357 16, 357 45, 357 47, 357 50, H01L 3300, H01L 2712, H01L 29161

Patent

active

050578812

ABSTRACT:
A multiple quantum well light emitting compositional semiconductor device ch as a laser diode or a light emitting diode has an active region comprising an alternating sequence of layers of well layer material and of barrier layer material. The thickness of the barrier layer and of the adjacent well layers is chosen such that for one type of charge carrier a relatively high probability exists for such charge carriers to be present in the barrier region whereas the other type of charge carriers are localized in the potential wells. In this way it is possible to reduce the probability of non-radiative Auger recombination processes occurring thus reducing the threshold current and increasing the quantum efficiency of the device. This is particularly important since material systems with a small bandgap which lase at long wavelengths suitable for optical fibre transmission normally suffer performance penalties due to non-radiative Auger recombination and these penalties can be substantially reduced by tailoring the layer thicknesses to achieve the described probability distributions.

REFERENCES:
patent: 4630083 (1986-12-01), Yamakushi
patent: 4787089 (1988-11-01), Hayakawa et al.
patent: 4841531 (1989-06-01), Kondon et al.
patent: 4841533 (1989-06-01), Hayakawa et al.
patent: 4905060 (1990-02-01), Chinone et al.
patent: 4933728 (1990-06-01), Fukuzawa et al.

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