Light emitting chip and optical communication apparatus using th

Details Light emitting chip and optical communication apparatus using th Light emitting chip and optical communication apparatus using th

1985-01-25

1987-10-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 45, H01L 3300, H01S 319

Patent

active

047019271

ABSTRACT:
This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection ) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.

REFERENCES:
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4566171 (1986-01-01), Nelson et al.
Hirao et al, "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Leterstructure Lasers", J. Appl. Phys., 5(18), Aug. 1980, pp. 4539-4540.
Tronmer et al., "LPE of (In,Ga)(AsP) and (InGa)As on InP for 1.3 .mu.m High-Rechance IRED's and for Photodiodes in the 1.3 .mu.m to 1.65 .mu.m Wavelength Range," Siemens Forsch-n, Entwickl-Ber, Bd.11(1982), No. 4, 1982, pp. 204-208.
Hens-George, "Optische Nachrichtentechnik", Bibliothek Des Deutschen Patentamtes, Apr. 9, 1976, pp. 63-73.

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