Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-11-27
2007-11-27
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000, C257SE33061
Reexamination Certificate
active
10673273
ABSTRACT:
A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).
REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5599403 (1997-02-01), Kariya et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 5909081 (1999-06-01), Eida et al.
patent: 5959316 (1999-09-01), Lowery
patent: 6066861 (2000-05-01), Höhn et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6281032 (2001-08-01), Matsuda et al.
patent: 6319425 (2001-11-01), Tasaki et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6409938 (2002-06-01), Comanzo
patent: 6455340 (2002-09-01), Chua et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6661030 (2003-12-01), Komoto et al.
patent: 6669866 (2003-12-01), Kummer et al.
patent: 6692136 (2004-02-01), Marshall et al.
patent: 6756731 (2004-06-01), Sano
patent: 2001/0015443 (2001-08-01), Komoto
patent: 2001/0017874 (2001-08-01), Ishida
patent: 2001/0042866 (2001-11-01), Coman et al.
patent: 2003/0062530 (2003-04-01), Okazaki et al.
patent: 2003/0189215 (2003-10-01), Lee et al.
patent: 2004/0056254 (2004-03-01), Bader et al.
patent: 2004/0077114 (2004-04-01), Coman et al.
patent: 2005/0282373 (2005-12-01), Bader et al.
patent: 2006/0121702 (2006-06-01), Coman et al.
patent: 0854523 (1998-07-01), None
patent: 1 061 590 (2000-12-01), None
patent: 1138747 (2001-10-01), None
patent: 2 346 478 (2000-08-01), None
patent: 50-91292 (1973-12-01), None
patent: 52-004175 (1977-01-01), None
patent: 58-195276 (1983-11-01), None
patent: 61-007671 (1986-01-01), None
patent: 61-059886 (1986-03-01), None
patent: 61-158606 (1986-07-01), None
patent: 61-182256 (1986-08-01), None
patent: 61-182292 (1986-08-01), None
patent: 61-183986 (1986-08-01), None
patent: 62-132990 (1987-06-01), None
patent: 64-001290 (1989-01-01), None
patent: 04-010418 (1992-01-01), None
patent: 4-29374 (1992-01-01), None
patent: 04-057329 (1992-02-01), None
patent: 05-029663 (1993-02-01), None
patent: 05-198689 (1993-08-01), None
patent: 06-232510 (1994-08-01), None
patent: 6-302857 (1994-10-01), None
patent: 07-0886640 (1995-03-01), None
patent: 07-263553 (1995-10-01), None
patent: 09-008403 (1997-01-01), None
patent: 09-129932 (1997-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 10-163525 (1998-06-01), None
patent: 10-209555 (1998-08-01), None
patent: 10-270761 (1998-10-01), None
patent: 11-068157 (1999-03-01), None
patent: 11-506872 (1999-06-01), None
patent: 11-214744 (1999-08-01), None
patent: 2000-077723 (1999-09-01), None
patent: 11-340518 (1999-12-01), None
patent: 2000-067673 (2000-03-01), None
patent: 2000-183408 (2000-06-01), None
patent: 2000-196141 (2000-07-01), None
patent: 2000-228537 (2000-08-01), None
patent: 2000-277804 (2000-10-01), None
patent: 2000-299503 (2000-10-01), None
patent: 2001-007394 (2001-01-01), None
patent: 2001-015817 (2001-01-01), None
patent: 2001-085747 (2001-03-01), None
patent: 2001-144331 (2001-05-01), None
patent: 2001-196645 (2001-07-01), None
patent: 2001-203385 (2001-07-01), None
patent: 2001-203392 (2001-07-01), None
patent: 2001-206710 (2001-07-01), None
patent: 2001-253294 (2001-09-01), None
patent: 2001-284641 (2001-10-01), None
patent: 2001-298214 (2001-10-01), None
patent: 2001-313422 (2001-11-01), None
patent: 2002-154900 (2002-05-01), None
patent: 2000-196152 (2002-12-01), None
patent: WO-96/36080 (1996-11-01), None
patent: WO 97/00535 (1997-01-01), None
patent: WO-00/44966 (2000-08-01), None
patent: WO-01-08452 (2001-02-01), None
patent: WO-01/82384 (2001-11-01), None
patent: WO-03/034508 (2003-04-01), None
Daisuke Morita et al. (2002) “High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure,” Jpn J. Appl. Phys. vol. 41 pp. 1434-1436.
Office Action mailed Jan. 1, 2005, directed to related U.S. Appl. No. 10/614,342.
Han, J. et al. (1998). “AIGaN/GaN Quantum Well Ultraviolet Light Emitting Diodes,”Applied Physics Letters73(12):1688-1690.
Iwaya, M. et al. (2002). “Suppression of Phase Separation of AIGaN During Lateral Growth and Fabrication of High-efficiency UV-LED on Optimized AIGaN,”Journal of Crystal Growth237-239:951-955.
Shatalov, M. et al. (2002). “Deep Ultraviolet Light-Emitting Diodes Using Quaternary AlInGaN Multiple Quantum Wells,”IEEE Journal on Selected Topics in Quantum Electronics8(2):302-309.
Wong, W.S. et al. (2000). “InxGa1-xN Light Emitting Diodes on Si Substrates Fabricated by Pd-In Metal Bonding and Laser Lift-Off,”Applied Physics Letters77(18): 2822-2824.
Kneissl M. et al. (2001). “Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff,”IEEE Journal on Selected Topics in Quantum Electronics7(2):188-191.
Japanese Office Action dated Apr. 10, 2007, directed to counterpart JP application No. 2003-537131, 3 pages.
European Search Report dated Mar. 2, 2007, directed at related EP application No. 03015373.
Japanese Office Action mailed Dec. 19, 2006, directed to counterpart foreign application No. JP-2003-190549.
Izuno Kunihiro
Matsumoto Kouki
Nagahama Shinichi
Sakamoto Keiji
Sano Masahiko
Morrison & Foerster / LLP
Nichia Corporation
Tran Minh-Loan
LandOfFree
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