Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-04-27
2000-08-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 71, 257 40, 257 89, 257103, H01L 3300, H01L 29786, H05B 3300
Patent
active
061112704
ABSTRACT:
Light emitting apparatus is disclosed including a thin film transistor, a capacitor and an organic electroluminescent device. The thin film transistor includes a semiconductive layer having spaced apart first and second doped regions defining first and second current carrying terminals with a channel therebetween, an insulating layer overlying the channel and a control terminal formed on the insulating layer. A portion of the control terminal overlies a portion of the first doped region to form the capacitor. The organic electroluminescent device includes a first terminal connected to the second current carrying terminal.
REFERENCES:
patent: 5670792 (1997-09-01), Utsugi
patent: 5674636 (1997-10-01), Dodabalapur
Lee Hsing-Chung
So Franky
Xu Ji-Hai
Jackson, Jr. Jerome
Koch William E.
Motorola Inc.
Parsons Eugene A.
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